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Selective Area Growth of GaN by MOVPE and HVPE

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Abstract

Recent successful results on the selective area growth (SAG) of GaN that has been done by MOVPE and HVPE are shown. The SAG were carried out on MOVPE-grown GaN (0001) / sapphire substrates with lined or dotted SiO2 masks. Sub-micron GaN dot and line structures are fabricated by the SAG in MOVPE, so that smoothly overgrown GaN layers are successfully realized using the epitaxially lateral overgrowth (ELO) technique. The ELO structures are confirmed to be good quality GaN single crystal with a smooth surface, no grain boundaries, and low-dislocation densities. In addition, thick GaN bulk single crystals without any cracks are grown by the SAG in HVPE. Crystalline and optical properties of the GaN bulk are much improved. The reduction in the thermal strain due to the growth on the limited area as well as the ELO are found to be effective to reduce crystalline defects of the GaN bulk single crystals.

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References

  1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).

    Article  CAS  Google Scholar 

  2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Japan. J. Appl. Phys. 35, L74 (1996).

    Article  CAS  Google Scholar 

  3. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 35 (1986).

    Article  Google Scholar 

  4. S. Nakamura, Japan J. Appl. Phys. 30, L1705 (1991).

    Article  Google Scholar 

  5. T. W. Weeks Jr., M. D. Bremser, K. S. Ailei, E. Carlson, W. G. Perry, and R. F. Davis, Appl.Phys. Let. 67, 401 (1995).

    Article  CAS  Google Scholar 

  6. F. A. Ponce, B. S. Krusor, J. S. Major Jr., W. E. Plano, and D. F. Welch, Appl. Phys. Let. 67, 410(1995).

    Article  CAS  Google Scholar 

  7. S. Kurai, Y. Naoi, T. Abe, S. Ohmi and S. Sakai, Jpn. J. Appl. Phys. 35, 1637 (1996).

    Article  CAS  Google Scholar 

  8. I. Grzegory, J. Jum, M. Bockowski, S. Krukowski, M. Wroblewski, B. Lucznic and S. Porowski, J. Phys. Chem. Solids 56, 639 (1995).

    Article  CAS  Google Scholar 

  9. S. Porowski, Proc. 2nd Int. Conf. on Nitride Semicond. (Tokushima, 1997), p. 430.

    Google Scholar 

  10. A. Pelzmann, C. Kirchner, M. Mayer, M. Schauler, M. Kamp, K. J. Ebeling, I. Grzegory, M. Leszczynsky, G. Nowak, and S. Porowski, Proc. 2nd Int. Conf. on Nitride Semicond. (Tokushima, 1997), p. 435.

    Google Scholar 

  11. S. Nakamura, M. Senoh, S. Nagahara, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Proc. 2nd Int. Conf. on NitrideSemicond. (Tokushima, 1997), p. 444.

    Google Scholar 

  12. Y. Kato, S. Kitamura, K. Hiramatsu and N. Sawaki, J. Crystal Growth, 144 (1994) 133

    Article  CAS  Google Scholar 

  13. X. Li, A. M. Jones, S. D. Roh, D. A. Turnbull, E. E. Reuter, S. Q. Gu, S. G. Bishop and J. J. Coleman, Mat. Res. Soc. Symp. Proc. 395, 943 (1996).

    Article  CAS  Google Scholar 

  14. O. H. Nam, M. D. Bremser, B. L. Ward, R. J. Nemanich and R. F. Davis, Japan J. Appl. Phys. 36, L532 (1997).

    Article  CAS  Google Scholar 

  15. T. S. Zheleva, O-H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 71, 2472 (1997).

    Article  CAS  Google Scholar 

  16. O-H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, Appl. Phys. Lett. 71, 2638 (1997).

    Article  CAS  Google Scholar 

  17. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 71, 1204 (1997).

    Article  CAS  Google Scholar 

  18. H. Matsushima, M. Yamaguchi, K. Hiramatsu, and N. Sawaki, Proc. 2nd Int. Conf. on Nitride Semicond. (Tokushima, 1997), p. 492.

    Google Scholar 

  19. B. Beaumont, P. Gibart, M. Vaille, S. Haffouz, G. Nataf, and A. Bouille, Proc. 2nd Int. Conf.on Nitride Semicond. (Tokushima, 1997), p. 412.

    Google Scholar 

  20. T. Tanaka, K. Uchida, A. Watanabe and S. Minagawa, Appl. Phys. Lett. 68, 976 (1996).

    Article  CAS  Google Scholar 

  21. S. Kitamura, K. Hiramatsu, and N. Sawaki, Japan. J. Appl. Phys. 34, L1184 (1995)

    Article  CAS  Google Scholar 

  22. K. Hiramatsu, S. Kitamura, and N. Sawaki, Mat. Res. Soc. Symp. Proc. 395, 267 (1996).

    Article  CAS  Google Scholar 

  23. R. D. Underwood, D. Kapolnek, B. P. Keller, S. Keller, S. P. DenBaars, and U. K. Mishra, Proc. Topical Workshop on III-V Nitrides (Nagoya, 1995) P. 181.

    Google Scholar 

  24. D. Kapolnek, R. D. Underwood, B. P. Keller, S. Keller, S. P. DenBaars and U. K. Mishra, J.Crystal Growth 170, 340(1997).

    Article  CAS  Google Scholar 

  25. T. Akasaka, Y. Kobayashi, S. Ando, and N. Kobayashi, Appl. Phys. Lett. 71, 2196 (1997).

    Article  CAS  Google Scholar 

  26. T. Akasaka, Y. Kobayashi, S. Ando, N. Kobayashi, and M. Kumagai, Proc. 2nd Int. Conf. on Nitride Semicond. (Tokushima, 1997), p. 490.

    Google Scholar 

  27. D. Kapolnek, S. Keller, R. D. Underwood, P. Kozodoy, S. P. DenBaars, And U. K. Mishra, Proc. 2nd Int. Conf. on Nitride Semicond. (Tokushima, 1997), p. 494.

    Google Scholar 

  28. T. Detchprohm, K. Hiramatsu, H. Amano and I. Akasaki, Appl. Phys. Lett. 61, 2688 (1992).

    Article  CAS  Google Scholar 

  29. T. Detchprohm, T. Kuroda, K. Hiramatsu, N. Sawaki and H. Goto, Inst. Phys. Conf. Ser. No. 142: Chap. 5, 859 (1996).

    Google Scholar 

  30. A. Usui, H. Sunakawa, A. Sakai and A. Yamaguchi, Japan. J. Appl. Phys. 36, 899 (1997).

    Article  Google Scholar 

  31. T. Shibata, H. Sone, K. Yahashi, M. Yamaguchi, K. Hiramatsu, and N. Sawaki, Proc. 2nd Int. Conf. on Nitride Semicond. (Tokushima, 1997), p. 154.

    Google Scholar 

  32. A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 71, 2259 (1997).

    Article  CAS  Google Scholar 

  33. Y. Kawaguchi, M. Shimizu, M. Yamaguchi, K. Hiramatsu, N. Sawaki, E. Taki, H. Tsuda, N. Kuwano, K. Oki, T. Zheleva, and R. F. Davis, Proc. 2nd Int. Conf. on Nitride Semicond. (Tokushima, 1997), p. 22.

    Google Scholar 

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Acknowledgments

This work was partly supported by JSPS Research for the Future Program in the Areas of Atomic-Scale Surface and Interface Dynamics.

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Authors and Affiliations

  1. Dept. of Electrical & Electronic Engineering, Mie Univ., 1515 Kamihama, Tsu, Mie 514, Japan

    K. Hiramatsu

  2. Dept. of Electronics, Furo-cho, Chikusa-ku, Nagoya Univ., Nagoya, 464-01, Japan

    H. Matsushima, T. Shibata & N. Sawaki

  3. Central Research Laboratory, Mitsubishi Cable Industries, Ltd., 4-3, Ikejiri, Itami, 664, Japan

    K. Tadatomo, H. Okagawa & Y. Ohuchi

  4. Tsukuba Research Lab., Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, 300-32, Japan

    Y. Honda & T. Matsue

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  1. K. Hiramatsu
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Hiramatsu, K., Matsushima, H., Shibata, T. et al. Selective Area Growth of GaN by MOVPE and HVPE. MRS Online Proceedings Library 482, 334–345 (1997). https://doi.org/10.1557/PROC-482-257

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  • DOI: https://doi.org/10.1557/PROC-482-257

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