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Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/Tem Method

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Abstract

We present a sample preparation technique for using transmission electron microscopy (TEM) to profile the dopant in a specified doped region of a very large scale integrated (VLSI) devices. This technique is based on preferential etching of the doped region in silicon. Because the rate at which silicon is etched depends on the dopant concentration, the dopant distribution can be inferred by observing the thickness fringe. Using two-beam approximation and information on the dependence of the etching rate on the concentration, we calculated the intensity of the transmitted electron beam and found that the results agreed well with the observed fringes. In addition, by using a focused ion beam (FIB), we could also observe the dopant distribution in a specified source region of a VLSI device.

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Acknowledgement

We thank Mr. Shuichi Enomoto and Dr. Susumu Asada for providing the VLSI samples, and we thank Dr. Ichiro Hirosawa, Mr. Takashi Ide, and Mr. Keiji Shiotani for helpful discussions and encouragement throughout this work.

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Authors and Affiliations

  1. Analysis and Evaluation Technology Center, NEC Corporation, 1753 Shimonumabe, Nakaharaku, Kawasaki, Kanagawa, 211, Japan

    H. Kimura & K. Shimizu

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  1. H. Kimura
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  2. K. Shimizu
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Kimura, H., Shimizu, K. Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/Tem Method. MRS Online Proceedings Library 480, 83–88 (1997). https://doi.org/10.1557/PROC-480-83

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  • DOI: https://doi.org/10.1557/PROC-480-83

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