Abstract
The growth of Si dots on thermally-grown SiO2/c-Si from a thermal decomposition of pure silane has been systematically studied in the temperature range from 500 to 650°C. It has been suggested mat the Si dot height and dot diameter on as-grown SiO2 are rate-limited by the cohesive action of adsorbed precursors and the thermal decomposition of silane on Si nucleation sites, respectively. The nucleation site on as-grown SiO2 is likely to be generated by the thermal dissociation of surface Si-O bonds. It has been also found that in Si dot formation on OH-terminated SiO2 surface the nucleation density is dramatically enhanced and consequently the dot size and its distribution become small. This implies that surface OH bonds can provide the nucleation sites.
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Nakagawa, K., Fukuda, M., Miyazaki, S. et al. Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition. MRS Online Proceedings Library 452, 243–248 (1996). https://doi.org/10.1557/PROC-452-243
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DOI: https://doi.org/10.1557/PROC-452-243