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Electrical Characterization of Ion Implanted, Thermally Annealed TiN Films Acting as Diffusion Barriers on Shallow Junction Silicon Devices

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Abstract

TiN films prepared by N +2 implantation onto evaporated Ti layers are tested as diffusion barriers in contact with a thick Al overlayer. Both the TiN/Al and TiSi2/TiN/Al contact structures are evaluated, after thermal treatments up to 600 C, on shallow junction diodes and four terminal resistor test patterns for contact resistance measurements. It is shown that, upon annealing at 600 C, the TiSi2/TiN/Al contact system still exhibits excellent electrical performances. The degradation is found to depend on TiSi2 thickness and contact area.

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Authors and Affiliations

  1. CNR-Ist.LAMEL, Via Castagnoli, 1, Bologna, Italy

    A. Armigliato, M. Finetti, E. Gabilli, S. Guerri, P. Ostoja, G. Sabato & A. Scorzoni

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  1. A. Armigliato
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  2. M. Finetti
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  3. E. Gabilli
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  4. S. Guerri
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  5. P. Ostoja
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  6. G. Sabato
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  7. A. Scorzoni
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Armigliato, A., Finetti, M., Gabilli, E. et al. Electrical Characterization of Ion Implanted, Thermally Annealed TiN Films Acting as Diffusion Barriers on Shallow Junction Silicon Devices. MRS Online Proceedings Library 45, 183–188 (1985). https://doi.org/10.1557/PROC-45-183

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  • DOI: https://doi.org/10.1557/PROC-45-183

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