Abstract
Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and I stpositive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.
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Johnson, M.A.L., Yu, Z., Boney, C. et al. Reactive MBE Growth of GaN and GaN∶:H on GaN/SiC Substrates. MRS Online Proceedings Library 449, 215–220 (1996). https://doi.org/10.1557/PROC-449-215
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DOI: https://doi.org/10.1557/PROC-449-215