Abstract
Laser MBE is a process especially useful for epitaxial layer-by-layer growth of ceramic thin films directly from sintered ceramic targets. By employing high vacuum MBE conditions, the process has a restriction in the controllability of chemical composition, e.g. nonstoi chiometry in oxides and nitrides, as compared with conventional pulsed laser deposition, but instead gains the possibility of in situ monitoring of surface reaction on an atomic scale by RHEED. Ever since our first success in observing RHEED intensity oscillation for CeO2 film growth on Si(l11), we have verified the molecular layer epitaxy by laser MBE for perovskite oxides (SrTiO3, BaTiO3, SrVO3 , etc) and infinite-layer cuprates MCuO2 (M= Sr, Ba, Ca) on SrTiO3 substrates as well as for oxide and nitride films on Si substrates. Key factors to design the laser MBE system, operation parameters, and recent experimental results are presented and discussed.
Similar content being viewed by others
References
L. Esaki and R. Tsu, IBM J. Res. Dev. 14, 61 (1970).
J. T. Cheung, G. Niizawa, J. Moyle, N. P. Ong, B. M. Paine, and T. Vreeland Jr., J. Vac. Sci. Technol., A4, 2086 (1986).
J. G. Bednorz and K. A. Müller, Z Phys. B, 64, 189 (1986).
H. Koinuma, MRS Bulletin, 19 (9), 21 (1994).
H. Koinuma, M. Kawasaki, M. Funabashi, T. Hasegawa, K. Kishio, K. Kitazawa, K. Fueki, and S. Nagata, J. Appl. Phys., 62, 1524 (1987).
T. Venkatesan, X. D. Wu, B. Dutta, A. Inam. M. S. Hegde, D. M. Hwang, C. C. Chang, L. Nazar and B. Wilkens, Appl. Phys. Lett, 54, 581 (1986).
H. Koinuma, Bull. Mat. Sci., 18, 435 (1995).
H. Hashimoto, K. Kishio, and H. koinuma, Jpn. J. Appl. Phys., 30, 1685 (1991).
H. Koinuma and M. Yoshimoto, Appl. Surf. Sci., 75, 308 (1994).
Laser MBE system of our design is commercially available from Pascal Co., Ltd.
M. Yoshimoto, H. Ohkubo, N. Kanda, H. Koinuma, Jpn. J. Appl. Phys., 31, 3664 (1992).
M. Yoshimoto, H. Ohkubo, N. Kanda, H. Koinuma, K. Horiguchi, M. Kumagai, K. Hirai, Appl. Phys. Lett., 61, 2659 (1992)
M. Kawasaki, K. Takahashi, T. Maeda, R. Tsuchiya, M. Shinohara, O Ishiyama, T. Yonezawa, M. Yoshimoto, H. Koinuma, Science 266, 1540 (1994).
The stepped substrates are commercially available from Shinko-sya Co., Ltd.
M. Yoshimoto, T. Maeda, K. Shimozono, H. Koinuma, M. Shinohara, O. Ishiyama, F. Ohtani, Appl. Phys. Lett., 65, 3197 (1994)
M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, and A. Miyamoto, Appl. Phys. Lett. 67, 2615 (1995).
M. Kawasaki, A. Ohtomo, K. Takahashi, M. Yoshimoto, and H. Koinuma, Appl. Surf. Sci., in press.
H. Koinuma, H. Nagata, T. Tsukahara, S, Gonda, M. Yoshimoto. Appl. Phys. Lett. 58, 2027 (1991).
T. Terashima, Y. Bando, K. Iijima, K. Yamamoto, K. Hirata, K. Kamigaki, and H. Terauchi: Phys. Rev. Lett. 65, 2684 (1990).
M. Kawasaki, N. Kanda, R. Tsuchiya, K. Nakano, A. Ohtomo, K. Takahashi, H. Kubota, T. Shitraishi, and H. Koinuma, Advances in Superconductivity, 8, in press.
H. Koinuma, M. Yoshimoto, H. Nagata, and T. Tsukahara, Solid State Comn., 80, 9 (1991).
M. Yoshimoto, H. Nagata, T. Tsukahara and H. Koinuma, Jpn. J. Appl. Phys., 29, L1199 (1990)
M. B. Lee, M. Kawasaki, M. Yoshimoto, M. Kumagai, and H. Koinuma, Jpn. J. Appl. Phys., 33, 6308 (1994).
M. B. Lee, M. Kawasaki, M. Yoshimoto, and H. Koinuma, Appl. Phys. Lett., 66, 1331 (1995).
M. Yoshimoto, K. Shimozono, T. Maeda, T. Ohnishi, M. Kumagai, T. Chikyow, O. Ishiyama, M. Shinohara, and H. Koinuma, Jpn. J. Appl. Phys., 34 (1995), L688.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Koinuma, H., Kawasaki, M. & Yoshimoto, M. Laser MBE for Atomically Defined Ceramic Film Growth. MRS Online Proceedings Library 397, 145–156 (1995). https://doi.org/10.1557/PROC-397-145
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-397-145