Skip to main content
Log in

The Stability of Reactively Sputtered WNx Thin Films on III-V Semiconductors

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

WNX thin films were deposited at room temperature on (100) n-type GaAs substrates by rf reactive sputtering of a high purity W target in Ar/N2 gas mixtures. Deposition parameters such as the rf power, the ratio of gas flows, and the total pressure can be optimized for the preparation of uniform and low resistivity WNX thin films. The W:N ratio in the as-deposited WNX films was determined using Auger spectroscopy and the morphology was examined by scanning electron microscopy (SEM).

The WNx/GaAs samples were subjected to rapid thermal annealing in an N2 atmosphere at temperatures between 400°C and 800°C. The thermal stability of these structures was examined using electrical measurements and Auger profiling. The results are correlated with the properties of as-deposited films and the influence of various processing parameters will be discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. F. Pintchovski, Ed Travis, Mat. Res. Soc. Symp. Proc. 260, 777 (1992).

    Article  CAS  Google Scholar 

  2. L. C. Zhang, C. L. Liang, S. K. Cheung, N. W. Cheung, J. Vac. Sci. Technol. B, 5, 1716 (1986).

    Article  Google Scholar 

  3. Z. Zhongde, N. W. Cheung, J. Vac. Sci. Technol. B, 4, 1398 (1986).

    Article  Google Scholar 

  4. K. Steiner, N. Uchitomi, N. Toyoda, Jap. J. Appl. Phys., 29, 489, (1990).

    Article  CAS  Google Scholar 

  5. M. WIttmer, J. Vac. Sci. Technol. A, 3, 1797 (1985).

    Article  CAS  Google Scholar 

  6. N. Thomas, P. Suryanarayana, E. Blanquet, C. Vahlas, R. Madar, C. Bernard, J. Electrochem. Soc., 140, 475 (1993).

    Article  CAS  Google Scholar 

  7. K. T. Rie, A. Gebauer, J. Woehle, Surf. Coatings Technol, 60, 385 (1993).

    Article  CAS  Google Scholar 

  8. S. D. Marcus, R. F. Foster, Thin Solid Films, 236, 330 (1993).

    Article  CAS  Google Scholar 

  9. E. O. Travis, R. W. Fiordalice, Thin Solid Films, 236, 325 (1993).

    Article  CAS  Google Scholar 

  10. N. Uchitomi, M. Nagaoka, K. Shimada, T. Mizoguchi, N. Toyoda, J. Vac. Sci. Technol. B, 4, 1392 (1986).

    Article  CAS  Google Scholar 

  11. Z. Pang, M. Boumerzoug, R. V. Kruzelecky, P. Mascher, and John G. Simmons, Mat. Res. Soc. Symp. Proc. 260, 561 (1992).

    Article  CAS  Google Scholar 

  12. Z. Pang, M. Boumerzoug, R. V. Kruzelecky, P. Mascher, John G. Simmons, and D. A. Thompson, J. Vac. Sci. Technol. A, 12, 83 (1994).

    Article  CAS  Google Scholar 

  13. Y. T. Kim, C. W. Lee, S. Min, Jpn. J. Appl. Phys., 32, 6126 (1993)

    Article  CAS  Google Scholar 

  14. D. Gregusova, T. Lalinsky, Z. Mozolova, J. Mater. Sci.: Materials in Electronics, 4,197 (1993).

    CAS  Google Scholar 

  15. Z. Pang, M. Boumerzoug» R. V. Kruzelecky, P. Mascher, John G. Simmons, and D.A. Thompson, Can. J. Phys. 70,1076 (1992).

    Article  CAS  Google Scholar 

  16. J. Li, J. W. Strane, S. W. Russell, P. Chapman, Y. Shacham-Diamand, J. W. Mayer, Mat. Res. Soc. Symp. Proc. 260, 605 (1992).

    Article  CAS  Google Scholar 

  17. C. Y. Ting, Thin Solid Films, 119,11 (1992).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Pang, Z., Boumerzoug, M., Mascher, P. et al. The Stability of Reactively Sputtered WNx Thin Films on III-V Semiconductors. MRS Online Proceedings Library 337, 343–348 (1994). https://doi.org/10.1557/PROC-337-343

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-337-343

Navigation