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Visible Electroluminescence from PN Junction Type μc-SiC/ Porous Si / c-Si Structures

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Abstract

We have fabricated two kinds of n-type microcrystalline silicon carbon (μc-SiC) / porous silicon (PS) / p-type crystalline silicon (c-Si) pn junctions and demonstrated a visible light emission from them. We have observed three types of visible light emission; an uniform red light emission at a forward current above 12mA/cm2 for the pn junction using a 0.2–0.4 Ωcm c-Si substrate, and a very weak white light emission at a forward current of about 90 mA/mm2 and a strong orange-red light emission at a forward current from 200 to 619 mA/mm2 for the pn junction using a 3.5–4.5 Ωcm c-Si substrate.

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Acknowledgments

The authors would like to thank Professor N. Koshida of Tokyo University of Agriculture and Technology and Associate Professor Y. Kanemitsu of Tsukuba University for their helpful advice, as well as J. Yasuda and T. Nishinakagawa for their technical assistance.

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Authors and Affiliations

  1. Nippon Steel Corporation, Electronics Research Laboratories, 1618 Ida, Nakahara-ku, Kawasaki, 211, Japan

    T. Futagi, T. Matsumoto, M. Katsuno, Y. Ohta, H. Mimura & K. Kitamura

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  1. T. Futagi
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  2. T. Matsumoto
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  3. M. Katsuno
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  4. Y. Ohta
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  5. H. Mimura
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  6. K. Kitamura
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Futagi, T., Matsumoto, T., Katsuno, M. et al. Visible Electroluminescence from PN Junction Type μc-SiC/ Porous Si / c-Si Structures. MRS Online Proceedings Library 283, 389–394 (1992). https://doi.org/10.1557/PROC-283-389

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  • DOI: https://doi.org/10.1557/PROC-283-389

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