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Picosecond Decay Dynamics in Porous Silicon

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Abstract

Picosecond decay dynamics of luminescent porous silicon has been studied using the second harmonics (SH) of a cw modelocked YLF laser and a synchroscan streak camera. Picosecond luminescence decay shows nonexponential behavior that becomes large with decreasing emission energy. When increasing hydrogen termination on the surface of a Si microcrystal occurs, this picosecond luminescence decay becomes faster. Our experimental results indicate that there are two luminescent states in porous Si: a weak luminescent quantum confinement state and a strong luminescent surface localized state.

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Authors and Affiliations

  1. Electronics Research Laboratories, Nippon Steel Corporation, 5 - 10 - 1 Fuchinobe, Sagamihara, Kanagawa, 229, Japan

    T. Matsumoto, T. Futagi & H. Mimura

  2. Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki, 305, Japan

    Y. Kanemitsu

Authors
  1. T. Matsumoto
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  2. T. Futagi
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  3. H. Mimura
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  4. Y. Kanemitsu
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Matsumoto, T., Futagi, T., Mimura, H. et al. Picosecond Decay Dynamics in Porous Silicon. MRS Online Proceedings Library 283, 149–153 (1992). https://doi.org/10.1557/PROC-283-149

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  • DOI: https://doi.org/10.1557/PROC-283-149

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