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MeV Ion Implantation of Er into LiNbO3

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Abstract

The incorporation of Er into LiNbO3 is of great interest for fabricating waveguide lasers and amplifiers. We compare Er diffusion data with the results of Er implantation, performed at 3.6 MeV energy. Even after annealing for 4h at 1060°C, the resulting Er profiles display very good matching to the optical modes. The results of a theoretical gain estimate are presented.

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Acknowledgement

We acknowledge the cooperation with the Tandetron Lab. of OFF at KFA Jilich.

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Authors and Affiliations

  1. Forschungszentrum (KFA), D-W5170 Jülich, Institut für Schicht- und Ionentechnik (ISI), Germany

    M. Fleuster, Ch. Buchal, H. Holzbrecher, U. Breuer, M. Dinand, H. Suche, R. Brinkmann & W. Sohler

  2. ZCH of KFA Jülich, D-W5170 Jülich, Germany

    H. Holzbrecher & U. Breuer

  3. Angewandte Physik, Universität, D-W4790, Paderborn, Germany

    M. Dinand, H. Suche, R. Brinkmann & W. Sohler

Authors
  1. M. Fleuster
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  2. Ch. Buchal
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  3. H. Holzbrecher
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  4. U. Breuer
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  5. M. Dinand
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  6. H. Suche
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  7. R. Brinkmann
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  8. W. Sohler
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Fleuster, M., Buchal, C., Holzbrecher, H. et al. MeV Ion Implantation of Er into LiNbO3. MRS Online Proceedings Library 279, 279–284 (1992). https://doi.org/10.1557/PROC-279-279

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  • DOI: https://doi.org/10.1557/PROC-279-279

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