Abstract
Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec.
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Acknowledgement
We would like to thank Dr. I-Wei Wu at Xerox Parc for making amplifiers and valuable discussions on the process. This work was supported by the U.S. Department of Energy under Contract No. DE-AC0376SF00098.
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Cho, G., Perez-Mendez, V., Hack, M. et al. Charge-Sensitive Poly-Silicon TFT Amplifiers for a-Si:H Pixel Particle Detectors. MRS Online Proceedings Library 258, 1181–1186 (1992). https://doi.org/10.1557/PROC-258-1181
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DOI: https://doi.org/10.1557/PROC-258-1181