Abstract
Analytical electron microscopy (AEM) and Rutherford backscattering spectroscopy-ion channeling (RBS-C) have been used to characterize single crystal 6h-silicon carbide implanted at room temperature with 160 keV 57Fe ions to fluences of 1, 3, and 6 x 1016 ions/cm2. Best correlations among AEM, RBS, and TRIM calculations were obtained assuming a density of the amorphized implanted regions equal to that of crystalline SiC. No iron-rich precipitates or clusters were detected by AEM. Inspection of the electron energy loss fine structure for iron in the implanted specimens suggests that the iron is not metallically-bonded, supporting conclusions from earlier conversion electron Mössbauer spectroscopy (CEMS) studies. In-situ annealing surprisingly resulted in crystallization at 600°C with some redistribution of the implanted iron.
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Acknowledgement
The authors thank Drs. N. D. Evans, P. S. Sklad, P. Thevenard, and J. Pawel for helpful discussions, and A. M. Williams and A. T. Fisher for electron microscopy specimen preparation. Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-AC05-84OR21400 with Martin Marietta Energy Systems, Inc.
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Bentley, J., Romana, L.J., Horton, L.L. et al. Distribution and Characterization of Iron in Implanted Silicon Carbide. MRS Online Proceedings Library 235, 363–368 (1991). https://doi.org/10.1557/PROC-235-363
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DOI: https://doi.org/10.1557/PROC-235-363