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Advances in Self-Limiting Growth of Wide Bandgap II–VI Semiconductors

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Abstract

Recent advances in understanding the ALE (atomic layer epitaxy) growth of ZnSe, ZnS and ZnTe are reviewed. The Ideal ALE growth is obtained in the substrate temperature range of 250–350°C for ZnSe. In the ALE growth of ZnSe and ZnTe, a unique self-limiting mechanism is observed, in which the deposition rate saturates at 0.5 monolayer per cycle. Furthermore, applications of ALE of II–VI compounds to the growth of strained layer superlattices are also reviewed.

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Acknowledgement

This work was supported in part by a Grand-in-Aid for Scientific Research on Priority Area, New Functionality Materials-Design, Preparation and Control, the Ministry of Education, Science and Culture, No.02204011.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 0hokayama, Meguro-ku, Tokyo, 152, Japan

    M. Konagai, Y. Takemura, H. Nakanishi & K. Takahashi

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  1. M. Konagai
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  2. Y. Takemura
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  3. H. Nakanishi
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  4. K. Takahashi
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Konagai, M., Takemura, Y., Nakanishi, H. et al. Advances in Self-Limiting Growth of Wide Bandgap II–VI Semiconductors. MRS Online Proceedings Library 222, 233–242 (1991). https://doi.org/10.1557/PROC-222-233

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  • DOI: https://doi.org/10.1557/PROC-222-233

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