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Regrowth of Damaged Layers in Diamond Produced by Ion Implantation

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Abstract

We have used RBS/Channeling, perturbed angular correlation (PAC) and optical absorption to study the regrowth of disordered layers in diamond produced by implantation with carbon, or with carbon plus boron or indium ions. For C or C plus B implantation doses of 2 × 10−15 cm−2 or less, complete recovery of channeling damage occurred after RTA at 1100°C or furnace annealing at 900°C. Optical measurements on samples implanted with high energy carbon ions show better recovery compared to the shallower implantations. PAC results showed that co-implantation with C and In caused a considerable fraction (~15%) of the In atoms to occupy well-defined lattice sites characterized by an electric field gradient having its major component along <111>, and a frequency of 116 MHz.

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Authors and Affiliations

  1. Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC, 27599-3255, USA

    G. S. Sandhu, B. Liu, N. R. Parikh, J. D. Hunn & M. L. Swanson

  2. University of Konstanz, Konstanz, FRG

    Th Wichert, M. Deicher & H. Skudlik

  3. University of Western Ontario, London, Ontario, Canada

    W. N. Lennard & I. V. Mitchell

Authors
  1. G. S. Sandhu
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  2. B. Liu
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  3. N. R. Parikh
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  4. J. D. Hunn
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  5. M. L. Swanson
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  6. Th Wichert
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  7. M. Deicher
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  8. H. Skudlik
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  9. W. N. Lennard
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  10. I. V. Mitchell
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Sandhu, G.S., Liu, B., Parikh, N.R. et al. Regrowth of Damaged Layers in Diamond Produced by Ion Implantation. MRS Online Proceedings Library 162, 189–194 (1989). https://doi.org/10.1557/PROC-162-189

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  • DOI: https://doi.org/10.1557/PROC-162-189

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