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Dislocation Nucleation in GeSi/Si(100) Strained Epilayers

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Abstract

The energetics of dislocation nucleation mechanisms in strained layers are calculated: for strains below 1% nucleation of new dislocations at the surface seems implausible. An experimental TEM study of the first dislocations in lowmismatch GeSi/Si epilayers suggests that dislocations are appearing through a completely novel type of dislocation source. 1/6<114> stacking faults which we observe in unrelaxed films appear to dissociate to emit a glissile dislocation. This source differs from all previous mechanisms in that it occurs in “dislocation-free” material, and a single fault can generate two distinct types of dislocation.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Liverpool, P.O. Box 147, L69 3BX, Liverpool, United Kingdom

    E. P. Kvam & C. J. Humphreys

  2. AT&T Bell Laboratories, 600 Mountain Avenue, NJ 07974, Murray Hill, U.S.A.

    D. J. Eaglesham, D. M. Maher & J. C. Bean

Authors
  1. D. J. Eaglesham
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  2. E. P. Kvam
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  3. D. M. Maher
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  4. C. J. Humphreys
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  5. J. C. Bean
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Eaglesham, D.J., Kvam, E.P., Maher, D.M. et al. Dislocation Nucleation in GeSi/Si(100) Strained Epilayers. MRS Online Proceedings Library 138, 397–402 (1988). https://doi.org/10.1557/PROC-138-397

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