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Mechanical Behaviour of the Σ=9(122) Grain Boundary in Silicon Studied by Hrem

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Abstract

The behaviour of a twin boundary under different strains at different temperatures Is observed. The evolution of the structure is studied and the non direct transmission of the deformation induced dislocations is considered in the light of the movement of the grain-boundary dislocations.

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Authors and Affiliations

  1. Département de Recherche Fondamentale, Centre d’Etudes Nucléaires, 85X-38041, Grenoble Cedex, France

    Jany Thibault-Desseaux & J. L. Putaux

  2. Laboratoire de Physique du Solide, Ecole des Mines de Nancy, INPL, 54042, Nancy Cedex, France

    A. Jacques

  3. Faculté des Sciences, Département de Physique, Agadir, Morrocco, USA

    M. Elkajbaji

Authors
  1. Jany Thibault-Desseaux
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  2. J. L. Putaux
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  3. A. Jacques
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  4. M. Elkajbaji
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Thibault-Desseaux, J., Putaux, J.L., Jacques, A. et al. Mechanical Behaviour of the Σ=9(122) Grain Boundary in Silicon Studied by Hrem. MRS Online Proceedings Library 122, 293–298 (1988). https://doi.org/10.1557/PROC-122-293

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  • DOI: https://doi.org/10.1557/PROC-122-293

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