Abstract
An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spectral density measurements, as well as through calculation, can be used to assist in the development of imagers incorporating pixel amplification circuits based on such transistors.
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References
LE Antonuk et al., Med. Phys. 27(2), 289 (2000).
JP Lu et al., Appl. Phys. Lett. 80(24), 4656 (2002).
LE Antonuk et al., SPIE 5745, 18 (2005).
M Rahal et al., IEEE Trans. Elect. Dev. 49(2), 319 (2002).
CA Dimitriadis et al., J. Appl. Phys. 83(3), 1469 (1998).
P Horowitz, “The Art of Electronics,” (Cambridge University Press, 1989).
SJ Orfanidis, “Introduction to Signal Processing,” (Prentice Hall, 1995).
C Jakobson et al., Solid-State Electron 42(10), 1807 (1998).
Y Li et al., J. Appl. Phys. 99, 064501–1 (2006).
N Matsuura et al., Med. Phys. 26(5), 672 (1999).
LE Antonuk et al., SPIE 6913, 69130I–1 (2008).
CA Dimitriadis et al., J. Appl. Phys. 91(12), 9919 (2002).
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Antonuk, L.E., Koniczek, M., McDonald, J. et al. Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures. MRS Online Proceedings Library 1066, 10661903 (2007). https://doi.org/10.1557/PROC-1066-A19-03
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DOI: https://doi.org/10.1557/PROC-1066-A19-03