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Hydrogen Neutralization of Chalcogen double donor Centers in Single-Crystal Silicon

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Abstract

Chalcogen (S,Se,Te) -doped silicon samples were hydrogen neutralized by different passivation techniques. The electrically active double-donor densities were determined by DLTS measurements. DLTS spectra reveal that both donor levels recover simultaneously. The activation energy for re-activation of neutralized isolated and pure pair sulphur double-donors is Ea(So/+) = 2,13 ± 0,15 eV and Ea (S2o/+) = 2,1 ± 0,15 eV, respectively.

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Acknowledgement

The authors would like to express their gratitude to P.Wagner for stimulating discussions and to Th.Wichert for the low energy implantation of protons; the authors also thank J.Walker for technical support.

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Authors and Affiliations

  1. Pensl, Roos, Stolz University of Erlangen, Institute of Applied Physics, GlückstraBe 9, D-8520, Erlangen, Germany

    Gerhard Pensl, G. Roos & P. Stolz

  2. Johnson Xerox Palo Alto Research Center, Palo Alto, California, 94304, USA

    N.M. Johnson

  3. Holm Heliotronic GmbH, P.O.Box 1129, D-8263, Burghausen, Germany

    C. Holm

Authors
  1. Gerhard Pensl
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  2. G. Roos
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  3. P. Stolz
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  4. N.M. Johnson
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  5. C. Holm
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Pensl, G., Roos, G., Stolz, P. et al. Hydrogen Neutralization of Chalcogen double donor Centers in Single-Crystal Silicon. MRS Online Proceedings Library 104, 241–246 (1987). https://doi.org/10.1557/PROC-104-241

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  • DOI: https://doi.org/10.1557/PROC-104-241

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