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Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature

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Abstract

We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (~0.13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (~0.07 cm2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 104 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep. The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

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Authors and Affiliations

  1. Institute of Physics and Applied Physics, Yonsei University, 120-749, Seoul, Korea

    D. K. Hwang, Jeong M. Choi, Jiyoul Lee, S. H. Jeong, Jae Hoon Kim & Seongil Im

  2. Department of Information and Display, Hongik University, 121-791, Seoul, Korea

    Ji Hoon Park & Eugene Kim

Authors
  1. D. K. Hwang
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  2. Ji Hoon Park
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  3. Jeong M. Choi
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  4. Jiyoul Lee
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  5. S. H. Jeong
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  6. Eugene Kim
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  7. Jae Hoon Kim
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  8. Seongil Im
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Hwang, D.K., Park, J.H., Choi, J.M. et al. Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. MRS Online Proceedings Library 905, 515 (2005). https://doi.org/10.1557/PROC-0905-DD05-15

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  • DOI: https://doi.org/10.1557/PROC-0905-DD05-15

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