Abstract
We theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/SiGe QWs.
Similar content being viewed by others
References
D. A. B. Miller, “Device Requirements for Optical Interconnects to Silicon Chips,” Proc. IEEE 97, 1166–1185 (2009).
G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures (Les Editions de Physique, Les Ulis, 1988).
G. Isella, D. Chrastina, B. Rössner, T. Hackbarth, H.-J. Herzog, U. König, and H. von Känel, Solid State Electron. 48, 1317 (2004).
E. D. Palik, Handbook of Optical Constants (Academic, 1985).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Chaisakul, P., Marris-Morini, D., Abadía, N. et al. Ge quantum well plasmon-enhanced quantum confined Stark effect modulator. MRS Online Proceedings Library 1627, 960 (2014). https://doi.org/10.1557/opl.2014.124
Published:
DOI: https://doi.org/10.1557/opl.2014.124