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Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

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High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

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Acknowledgments

This work was supported by the Grant-in-Aid for Scientific Research (C)(23560018) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT).

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Authors and Affiliations

  1. Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa, 243-0435, Japan

    Kensuke Akiyama

  2. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan

    Hiroshi Funakubo

  3. Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka, 816-8580, Japan

    Masaru Itakura

Authors
  1. Kensuke Akiyama
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  2. Hiroshi Funakubo
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  3. Masaru Itakura
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Akiyama, K., Funakubo, H. & Itakura, M. Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate. MRS Online Proceedings Library 1493, 287–292 (2012). https://doi.org/10.1557/opl.2013.407

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  • DOI: https://doi.org/10.1557/opl.2013.407

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