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ZnSxO1-x Films Grown on Flexible Substrates

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Abstract

Bandgap engineered ZnSxO1-x films were grown on Fluorinated Ethylene Propylene (FEP) substrates and analyzed using transmission spectroscopy. FEP is considered as a potential substrate for application in flexible electronics and semiconductor films.

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Acknowledgments

This research was supported by the U.S. Department of Energy, Office of Basic Energy Science, Division of Materials Science and Engineering under Award DE-FG02-07ER46386. The authors also acknowledge the Center of Materials Characterization at the University of Idaho.

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Authors and Affiliations

  1. Physics Department, University of Idaho, Moscow, ID, 83844-0903, USA

    Jesse Huso, Hui Che, John L. Morrison, Dinesh Thapa, Michelle Huso, Stanley Rhodes, Brianna Blanchard, Wei Jiang Yeh & Leah Bergman

  2. Department of Physics and Materials Science Program, Washington State University, Pullman, WA, 99164-2814, USA

    M. D. McCluskey

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  1. Jesse Huso
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  2. Hui Che
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  3. John L. Morrison
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  7. Brianna Blanchard
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  9. M. D. McCluskey
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  10. Leah Bergman
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Huso, J., Che, H., Morrison, J.L. et al. ZnSxO1-x Films Grown on Flexible Substrates. MRS Online Proceedings Library 1394, 48–52 (2012). https://doi.org/10.1557/opl.2012.417

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  • DOI: https://doi.org/10.1557/opl.2012.417

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