Abstract
SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective.
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This work was funded by the Spanish Government (Grant: MAT2010-20441-C02-02).
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Monasterio, M., Rodríguez, A., Rodríguez, T. et al. Individualization and Electrical Characterization of SiGe Nanowires. MRS Online Proceedings Library 1408, 37–42 (2012). https://doi.org/10.1557/opl.2012.33
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DOI: https://doi.org/10.1557/opl.2012.33