Abstract
In this present work we report the growth of Cd0.9Zn0.1Te doped with In by a modified THM technique. It has been demonstrated that by controlling the microscopically flat growth interface, the size distribution and concentration of Te inclusions can be drastically reduced in the as-grown ingots. This results in as-grown detector-grade CZT by the THM technique. The three-dimensional size distribution and concentrations of Te inclusions/precipitations were studied. The size distributions of the Te precipitations/inclusions were observed to be below the 10-µm range with the total concentration less than 105 cm−3. The relatively low value of Te inclusions/precipitations results in excellent charge transport properties of our as-grown samples. The (ux)e values for different as-grown samples varied between 6–20 ×10−3 cm2/V. The as-grown samples also showed fairly good detector response with resolution of ~1.5%, 2.7% and about 3.8% at 662 keV for quasi-hemispherical geometry for detector volumes of 0.18 cm3, 1 cm3 and 4.2 cm3, respectively.
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Roy, U.N., Weiler, S., Stein, J. et al. Growth of detector-grade CZT by Traveling Heater Method (THM): An advancement. MRS Online Proceedings Library 1341, 202 (2011). https://doi.org/10.1557/opl.2011.1478
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DOI: https://doi.org/10.1557/opl.2011.1478