Abstract
We demonstrate low-resistivity Ohmic contacts for n-Ge with ultra-shallow junction. Using the impurity δ-doping techniques with Ge homoepitaxy on Ge(111) below 400 ºC, we can achieve a very abrupt doping profile within a nanometer-scale width. By introducing the δ-doping to atomically controlled metal/Ge contacts, the current-voltage characteristics clearly show Ohmic conductions owing to the effective tunneling through the Schottky barrier. This approach is promising for a formation technology of ultra-shallow source/drain contacts for scaled Ge devices.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, Appl. Phys. Lett., 83, 3275 (2003).
C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, Appl. Phys. Lett., 87, 091909 (2005).
A. Satta, T. Janssens, T. Clarysse, E. Simoen, M. Meuris, A. Benedetti, I. Hoflijk, B. D. Jaeger, C. Demeurisse, and W. Vandervorst, J. Vac. Sci. Technol. B 24, 494 (2006).
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, Appl. Phys. Lett., 88, 162118 (2006).
A. Satta, A. D’Amore, E. Simoen, W. Anwand, W. Skorupa, T. Clarysse, B. V. Daele, and T. Janssens, Nucl. Instr. Meth. in Phys. Res. B 257, 157 (2007).
C. Wündisch, M. Posselt, B. Schmidt, V. Heera, T. Schumann, A. Mücklich, R. Grötzschel, W. Skorupa, T. Clarysse, E. Simoen, and H. Hortenbach, Appl. Phys. Lett., 95, 252107 (2009).
J.-H. Park, D. Kuzum, M. Tada, and K. C. Saraswat, Appl. Phys. Lett., 93, 193507 (2008).
K. Ikeda, Y. Yamashita, N. Sugiyama, N. Taoka, and S. Takagi, Appl. Phys. Lett., 88, 152115 (2006).
T. Nishimura, S. Sakata, K. Nagashio, K. Kita, and A. Toriumi, Appl. Phys. Express 2, 021202 (2009).
K. Nakagawa, M. Miyao, and Y. Shiraki, Thin Solid Films 183, 315 (1989).
M. Miyao and K. Nakagawa, Jpn. J. Appl. Phys. 33, 3791 (1994).
K. Nakagawa, Y. Kimura, and M. Miyao, J. Crystal Growth 175–176, 481 (1997).
K. Nakagawa et al., J. Crystal Growth 201–202, 560 (1999).
Y. Chiba, M. Sakuraba, B. Tillack, J. Murota, Thin Solid Films 518 S231 (2010).
A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, Appl. Phys. Lett. 89, 252110 (2006).
T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 91, 123123 (2007).
R. R. Lieten, S. Degroote, M. Kuijk, and G. Borghs, Appl. Phys. Lett. 92, 022106 (2008).
T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Exp.1, 051406 (2008).
Y. Zhou, M. Ogawa, X. Han, and K. L. Wang, Appl. Phys. Lett. 93, 202105 (2008).
K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, K. Yamamoto, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 96, 162104 (2010).
Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 94, 182105 (2009).
D. Kuzum, A. J. Pethe, T. Krishnamohan, Y. Oshima, Y. Sun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat, Tech. Dig. Int. Electron Device Meet 2007, 723.
Y.-J. Yang, W. S. Ho, C.-F. Huang, S. T. Chang, and C. W. Liu, Appl. Phys. Lett., 91, 102103 (2007).
J. Ushio, K. Nakagawa, M. Miyao, and T. Maruizumi, Phys. Rev. B 58, 3932 (1998).
S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 270– 286.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sawano, K., Hoshi, Y., Kasahara, K. et al. Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping. MRS Online Proceedings Library 1305, 1730 (2011). https://doi.org/10.1557/opl.2011.145
Published:
DOI: https://doi.org/10.1557/opl.2011.145