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Spin-On Glass as low temperature gate insulator

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Abstract

In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. Our SOG film was deposited at temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. Also, analysis of surface roughness by AFM is presented. We demonstrated the use of SOG as gate insulator, fabricating and characterizing inverted staggered a-SiGe:H TFTs. The observed results are promising and suggest that SOG films deposited at 200°C in the Laboratory of Microelectronics of INAOE could be an alternative to improve electrical characteristics of TFTs on low temperature flexible substrates.

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Authors and Affiliations

  1. Electronics Department, National Institute for Astrophysics, Optics and Electronics (INAOE), C.P., Luis Enrique Erro No. 1, 72840, Puebla, Mexico

    Miguel A. Domínguez, Pedro Rosales, Alfonso Torres, Joel Molina, Mario Moreno, Francisco J. De la Hidalga, Carlos Zuñiga & Wilfrido Calleja

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  1. Miguel A. Domínguez
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  2. Pedro Rosales
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  3. Alfonso Torres
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  4. Joel Molina
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  5. Mario Moreno
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  6. Francisco J. De la Hidalga
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  7. Carlos Zuñiga
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  8. Wilfrido Calleja
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Domínguez, M.A., Rosales, P., Torres, A. et al. Spin-On Glass as low temperature gate insulator. MRS Online Proceedings Library 1287, 810 (2010). https://doi.org/10.1557/opl.2011.1435

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  • DOI: https://doi.org/10.1557/opl.2011.1435

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