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Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect

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Abstract

Silicon dioxide based Electrochemical Metallization (ECM) cells were intensively studied as a promising candidate for CMOS compatible non-volatile memory devices. The resistance of ECM cells can be switched between a high resistive (OFF) state and a low resistive (ON) state by applying a sufficient voltage or current pulse. This resistance transition is attributed to the formation and rupture of a few nanometers in diameter metallic filament. However, the metal ion transport which is believed to be responsible for the filamentary switching mechanism is not understood in detail. In case of SiO2 we suppose protons or humidity may enhance the metal ion transport.

In this work we report our studies on the proton incorporation in amorphous SiO2 thin films focused on the impact of hydrogen and humidity on the resistive switching effect. The switching behavior was analyzed by current-voltage measurements performed at different ambient conditions. The incorporation of hydrogen has been confirmed by Time-of-Flight Secondary-Ion-Mass-Spectroscopy (ToF-SIMS). The results led to an expansion of the defect model proposed in the literature.

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References

  1. R. Waser and M. Aono, Nature Materials, 6 (2007)

  2. R. Waser and I. Valov, ECS Trans., 25 (2009)

  3. I. Valov, R. Waser, J. R. Jameson and M. N. Kozicki, Nanotechnology, in press (2011)

  4. C. Schindler, “Resistive switching in electrochemical metallization memory cells”, RWTH Aachen (2009), p. 32

  5. B. G. Willis and D. V. Lang, Thin Solid Films, 467 (2004)

  6. W. Martienssen and H. Warlimont (Eds.), “Springer Handbook of Condensed Matter and Materials Data”, Springer (2005), p. 563

  7. C. Cao, Y. He, J. Torras, E. Deumens, S. B. Trickey and H. Cheng, J. of Chem. Phys., 126 (2007)

  8. P. F. McMillan and R. L. Remmele Jr., Amer. Miner., 71 (1986)

  9. R. Armunanto, C. F. Schwenk and B. M. Rode, J. Phys. Chem. A, 107 (2003)

  10. J. L. Fulton, S. M. Kathmann, G. K. Schenter and M. Balasubramanian, J. Phys. Chem. A, 113 (2009)

  11. N. Knorr, R. Wirtz, S. Rosselli and G. Nelles, J. Phys. Chem. C, 114 (2010)

  12. R. Salh and H.-J. Fitting, Phys. Stat. Sol., 4 (2006)

  13. R. Waser, R. Dittmann, G. Staikov and K. Szot, Adv. Mat., 21 (2009)

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Authors and Affiliations

  1. Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany

    Stefan Tappertzhofen, Marek Hempel, Ilia Valov & Rainer Waser

  2. JARA – Jülich Aachen Research Alliance, Fundamentals of Future Information Technology, Germany

    Stefan Tappertzhofen, Marek Hempel, Ilia Valov & Rainer Waser

  3. Forschungszentrum Jülich GmbH, Jülich, Germany

    Ilia Valov & Rainer Waser

Authors
  1. Stefan Tappertzhofen
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  2. Marek Hempel
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  3. Ilia Valov
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  4. Rainer Waser
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Tappertzhofen, S., Hempel, M., Valov, I. et al. Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect. MRS Online Proceedings Library 1330, 302 (2011). https://doi.org/10.1557/opl.2011.1198

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  • DOI: https://doi.org/10.1557/opl.2011.1198

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