Abstract
High-temperature electronic applications are presently limited to a maximum operational temperature of 225°C for commercial integrated circuits (ICs) using silicon. One promise of silicon carbide (SiC) is high-temperature operation, although most commercial efforts have targeted high-voltage discrete devices. Depending on the technology choice, several processing challenges are involved in making ICs using SiC. Bipolar, metal oxide semiconductor field-effect transistors, and junction field-effect transistor technologies have been demonstrated in operating temperatures of up to 600°C. Current technology performance and processing challenges relating to making ICs in SiC are reviewed in this article.
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Acknowledgments
All SiC colleagues and PhD students at KTH (present and former) are acknowledged for their contributions to the in-house bipolar SiC technology. The Swedish Foundation for Strategic Research is acknowledged for funding the HOTSiC project.
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Zetterling, CM. Integrated circuits in silicon carbide for high-temperature applications. MRS Bulletin 40, 431–438 (2015). https://doi.org/10.1557/mrs.2015.90
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DOI: https://doi.org/10.1557/mrs.2015.90