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Quantitative compositional analysis of InxGa1−xN/GaN multiquantum wells in light-emitting diodes

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Abstract

A quantitative analysis of In concentration in InGaN/GaN multiquantum wells in light-emitting diodes was carried out using high-resolution transmission electron microscopy (HRTEM) and high-angle annual dark-field scanning TEM (HAADF-STEM). The In composition in InGaN was evaluated by the precise measurement of c-lattice parameters in the HRTEM micrographs, which increase with increasing In composition. The reliability of the results was confirmed by high-resolution x-ray diffraction measurements and Rutherford backscattering spectrometry. Quantitative In compositions can, therefore, be determined using HRTEM. We tried to determine the quantitative In compositions in InGaN by analyzing the intensity profiles of the HAADF-STEM images. However, several problems were encountered, such as differences in the thickness of the region observed, carbon contamination, and ion beam damage during specimen preparation. Therefore, relative differences in composition were observed in the HAADF-STEM images.

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ACKNOWLEDGMENTS

This research was supported by the Technology Innovation Program, 10048393, Core Technology Development of the Measurement and Analysis Techniques for the Promotion of Nanotechnology Commercialization funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).

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Authors and Affiliations

  1. Department of Measurement & Analysis, National Nanofab Center, Daejeon, 305-806, Korea

    Youngji Cho, Jung Sik Park, Jun-Mo Yang, Kyung Jin Park & Yun Chang Park

  2. Department of Applied Science, Korea Maritime and Ocean University, Busan, 606-791, Korea

    Youngji Cho & Jiho Chang

  3. Daegu Center, Korea Basic Science Institute, Daegu, 702-701, Korea

    Sang Geul Lee

  4. Department of Display Engineering, College of Convergence Technology, Dankook University, Cheonan, 330-714, Korea

    Kwan-Young Han

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  1. Youngji Cho
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Correspondence to Jun-Mo Yang.

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Cho, Y., Park, J.S., Yang, JM. et al. Quantitative compositional analysis of InxGa1−xN/GaN multiquantum wells in light-emitting diodes. Journal of Materials Research 30, 2893–2899 (2015). https://doi.org/10.1557/jmr.2015.188

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