Skip to main content
Log in

Study of Te nanoprecipitates in CdZnTe crystals

  • Article
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

In-depth studies of the two types of Te nanoprecipitates, linear and elliptic, in Cd1-xZnxTe (CZT) crystals grown by a modified vertical Bridgman method have been carried out. Electron diffraction suggests that linear Te nanoprecipitates align their Te atoms in a similar way to CZT structure, while elliptic Te nanoprecipitates cluster Te atoms following the pure trigonal Te structure. The three-dimensional morphology for both linear and elliptic Te nanoprecipitates has been revealed by delicate energy-dispersive x-ray analysis under electron microscopy. The density of elliptic Te nanoprecipitates ranges from 1015 to 1017 cm−3, while linear ones usually several times lower for a certain CZT wafer. The origin of both types of Te nanoprecipitates has been discussed in terms of the local density of intrinsic point defects in CZT. CZT properties are influenced more negatively by elliptic Te nanoprecipitates, which shed light on the methodology for crystal growth: preventing the clustering of intrinsic point defects during the crystal growth will be essential to obtain high quality CZT crystal.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. M. Pavlović, M. Jakšić, H. Zorc, Z. Medunić: Identification of deep trap levels from thermally stimulated current spectra of semi-insulating CdZnTe detector material. J. Appl. Phys.104023525 (2008)

    Google Scholar 

  2. G. Li, X. Zhang, H. Hua, W. Jie: A modified vertical Bridgman method for growth of high-quality CdZnTe crystals. J. Electron. Mater.341215 (2005)

    CAS  Google Scholar 

  3. Y. Xu, P.J. Sellin, A. Lohstroh, W. Jie, T. Wang, C. Mills, P. Veeramani, M. Veale: Comparison of the x-ray spectroscopy response and charge transport properties of semi-insulating In/Al-doped CdZnTe crystals. J. Appl. Phys.105083101 (2009)

    Google Scholar 

  4. T. Wang, W. Jie, D. Zeng, G. Yang, Y. Xu, W. Liu, J. Zhang: Temperature dependence of photoluminescence properties of In-doped cadmium zinc telluride. J. Mater. Res.231389 (2008)

    CAS  Google Scholar 

  5. R. Dhere, T. Gessert, J. Zhou, S. Asher, J. Pankow, H. Moutinho: Investigation of CdZnTe for thin-film tandem solar cell applications Compound Semiconductor Photovoltaics edited by R. Noufi, W.N. Shafarman, D. Cahen, and L. Stolt (Mater. Res. Soc. Symp. Proc 763Warrendale, PA 2006) B8.25

  6. A. Partovi, A.M. Glass, D.H. Olson, G.J. Zydzik, K.T. Short, R.D. Feldman, R.F. Austin: High-sensitivity optical-image processing device based on CdZnTe/ZnTe multiple-quantum-well structures. Appl. Phys. Lett.591832 (1991)

    CAS  Google Scholar 

  7. Z.Y. Tang, N.A. Kotov, M. Giersig: Spontaneous organization of single CdTe nanoparticles into luminescent nanowires. Science297237 (2002)

    CAS  Google Scholar 

  8. Z.Y. Tang, Z.L. Zhang, Y. Wang, S.C. Glotzer, N.A. Kotov: Self-assembly of CdTe nanocrystals into free-floating sheets. Science314274 (2006)

    CAS  Google Scholar 

  9. H.R. Vydyanath, J.A. Ellsworth, R.F. Fisher: Vapor-phase equilibria in the Cd1-xZnxTe alloy system. J. Electron. Mater.221067 (1993)

    CAS  Google Scholar 

  10. V. Babentsov, J. Franc, R.B. James: Compensation and trapping in large bandgap semiconductors: Tuning of the defect system in CdZnTe. J. Cryst. Growth3112377 (2009)

    CAS  Google Scholar 

  11. Z.J. Li: Micro-photoluminescence mapping on CdZnTe: Zn distribution. J. Appl. Phys.90260 (2001)

    CAS  Google Scholar 

  12. E. Selvig, C.R. Tonheim, K.O. Kongshaug, T. Skauli, H. Hemmen, T. Lorentzen, R. Haakenaasen: Defects in CdHgTe grown by molecular beam epitaxy on (211)B-oriented CdZnTe substrates. J. Vac. Sci. Technol., B26525 (2008)

    CAS  Google Scholar 

  13. L. Turjanska, P. Höschl, E. Belas, R. Grill, J. Franc, P. Moravec: Defect structure of CdZnTe. Nucl. Instrum. Methods Phys. Res., Sect. A45890 (2001)

    CAS  Google Scholar 

  14. G. Zha, W. Jie, T. Tan, L. Wang: Study of dislocations in CdZnTe single crystals. Phys. Status Solidi A2042196 (2007)

    CAS  Google Scholar 

  15. G. Zha, W. Jie, T. Tan, W. Zhang, F. Xu: The interface reaction and Schottky barrier between metals and CdZnTe. J. Phys. Chem. C11112834 (2007)

    CAS  Google Scholar 

  16. G. Yang, W. Jie, T. Wang, G. Li, W. Li, H. Hua: Correlation between ingot diameter and crystal properties of CdZnTe:In grown by the modified Bridgman method. Cryst. Growth Des.7435 (2007)

    CAS  Google Scholar 

  17. J. Franc, R. Grill, P. Hlídek, E. Belas, L. Turjanska, P. Höschl, I. Turkevych, A.L. Toth, P. Moravec, H. Sitter: The influence of growth conditions on the quality of CdZnTe single crystals. Semicond. Sci. Technol.16514 (2001)

    CAS  Google Scholar 

  18. G. Li, W. Jie, Z. Gu, H. Hua: Growth of CdZnTe crystals with different x values and their qualities comparison. J. Cryst. Growth263332 (2004)

    CAS  Google Scholar 

  19. X.M. Zhang, Z.L. Zhao, P. Zhang, R.B. Ji, Q.B. Li: Comparison of CdZnTe crystals grown by the Bridgman method under Te-rich and Te-stoichiometric conditions and the annealing effects. J. Cryst. Growth311286 (2009)

    CAS  Google Scholar 

  20. S.H. Shin, J. Bajaj, L.A. Moudy, D.T. Cheung: Characterization of Te precipitates in CdTe crystals. Appl. Phys. Lett.4368 (1983)

    CAS  Google Scholar 

  21. G.A. Kulkarni, V.G. Sathe, K.S.R.K. Rao, D.V.S. Muthu, R.K. Sharma: Micro-Raman imaging of Te precipitates in CdZnTe (Zn∼4%) crystals. J. Appl. Phys.105063512 (2009)

    Google Scholar 

  22. T. Wang, W. Jie, D. Zeng: Observation of nano-scale Te precipitates in cadmium zinc telluride with HRTEM. Mater. Sci. Eng., A472227 (2008)

    Google Scholar 

  23. G. Li, S-J. Shih, Y. Huang, W. Jie: Nanostructures of defects in CdZnTe single crystals. J. Cryst. Growth31185 (2008)

    CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Guoqiang Li.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Li, G., Shih, SJ., Mu, S. et al. Study of Te nanoprecipitates in CdZnTe crystals. Journal of Materials Research 25, 1298–1303 (2010). https://doi.org/10.1557/JMR.2010.0171

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.2010.0171

Navigation