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Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

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Abstract

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface.

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Authors and Affiliations

  1. Graduate School of Natural Science and Technology, Okayama University, Okayama, 700-8530, Japan

    Y. Morikawa & A. Ohi

  2. Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama, 700-8530, Japan

    M. Hirai, M. Kusaka & M. Iwami

Authors
  1. Y. Morikawa
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  2. M. Hirai
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  3. A. Ohi
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  4. M. Kusaka
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  5. M. Iwami
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Correspondence to M. Hirai.

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Morikawa, Y., Hirai, M., Ohi, A. et al. Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane. Journal of Materials Research 22, 1275–1280 (2007). https://doi.org/10.1557/jmr.2007.0151

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  • DOI: https://doi.org/10.1557/jmr.2007.0151

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