Abstract
Transition metal dichalcogenides (TMDC), such as MoS2, WS2 have attracted attention due to their mechanical and electronic properties in their two dimensional (2D) structures. Here, we report a facile growth of monolayer TMDC using oxide source materials with the assistant of NaCl. The addition of NaCl can enhance the lateral growth and widen the growth window of TMDC. Through carefully controlling the growth parameters, large area growth of TMDC can be achieved. Two steps E-beam lithography was utilized to fabricate electrodes of TMDC. The phototransistors made from the CVD grown TMDC show strong persistent photoconductivity (PPC). It was finally shown that TMDC device capping with h-BN could have suppressed PPC effects.
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K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov and A. K. Geim, Proceedings of the National Academy of Sciences of the United States of America 102 (30), 10451–10453 (2005).
Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan and J. Lou, Small 8 (7), 966–971 (2012).
Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li and T.-W. Lin, Advanced Materials 24 (17), 2320–2325 (2012).
Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A, Nat Nano 6 (3), 147–150 (2011).
Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen and H. Zhang, ACS Nano 6 (1), 74–80 (2011).
B. Liu, L. Chen, G. Liu, A. N. Abbas, M. Fathi and C. Zhou, ACS Nano 8 (5), 5304–5314 (2014).
D. Sarkar, W. Liu, X. Xie, A. C. Anselmo, S. Mitragotri and K. Banerjee, ACS Nano 8 (4), 3992–4003 (2014).
X. Ling, Y.-H. Lee, Y. Lin, W. Fang, L. Yu, M. S. Dresselhaus and J. Kong, Nano Letters 14 (2), 464–472 (2014).
A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller and J. C. Hone, Nat Mater 12 (6), 554–561 (2013).
Y. Xie, Z. Wang, Y. Zhan, P. Zhang, R. Wu, T. Jiang, S. Wu, H. Wang, Y. Zhao, T. Nan and X. Ma, Nanotechnology 28 (8) (2017).
S. Li, S. Wang, D.-M. Tang, W. Zhao, H. Xu, L. Chu, Y. Bando, D. Golberg and G. Eda, Applied Materials Today 1 (1), 60–66 (2015).
Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus and T. Palacios, Nano Letters 14 (10), 5569–5576 (2014).
W. Zhan, X. Yong, W. Haolin, W. Ruixue, N. Tang, Z. Yongjie, S. Jing, J. Teng, Z. Ying, L. Yimin, Y. Mei, W. Weidong, Z. Qing, M. Xiaohua and H. Yue, Nanotechnology 28 (32), 325602 (2017).
Y. Xie, Z. Wang and X. Ma, to be submitted (2017).
W. Zhang, J.-K. Huang, C.-H. Chen, Y.-H. Chang, Y.-J. Cheng and L.-J. Li, Advanced Materials 25 (25), 3456–3461 (2013).
N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas and M. Terrones, 2D Materials 1 (1), 011004 (2014).
Y. Xie, M. Madel, M. Feneberg, B. Neuschl, W. Q. Jie, Y. Hao, X. H. Ma and K. Thonke, Materials Research Express 3 (4), 045011 (2016).
S. Jeon, S.-E. Ahn, I. Song, C. J. Kim, U. I. Chung, E. Lee, I. Yoo, A. Nathan, S. Lee, J. Robertson and K. Kim, Nat Mater 11 (4), 301–305 (2012).
M. Madel, F. Huber, R. Mueller, B. Amann, M. Dickel, Y. Xie and K. Thonke, Journal of Applied Physics 121 (12), 124301 (2017).
P. Feng, I. Mönch, S. Harazim, G. Huang, Y. Mei and O. G. Schmidt, Nano Letters 9 (10), 3453–3459 (2009).
M. A. Reshchikov, M. Foussekis and A. A. Baski, J Appl Phys 107 (11), 113535 (2010).
Y.-C. Wu, C.-H. Liu, S.-Y. Chen, F.-Y. Shih, P.-H. Ho, C.-W. Chen, C.-T. Liang and W.-H. Wang, Scientific Reports 5, 11472 (2015).
C.-G. Andres, B. Michele, M. Rianda, S. Vibhor, J. Laurens, S. J. v. d. Z. Herre and A. S. Gary, 2D Materials 1 (1), 011002 (2014).
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Xie, Y., Ma, X., Wang, Z. et al. NaCl-Assisted CVD Synthesis, Transfer and Persistent Photoconductivity Properties of Two-Dimensional Transition Metal Dichalcogenides. MRS Advances 3, 365–371 (2018). https://doi.org/10.1557/adv.2018.156
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DOI: https://doi.org/10.1557/adv.2018.156