References
I.A. Blech and C. Herring, Appl. Phys. Lett. 29 (1976) p. 131.
M.A. Korhonen, P. Bargesen, K.N. Tu, and C-Y. Li, J. Appl. Phys. 73 (1993) p. 3790.
J.R. Black, IEEE Trans. Electron. Devices ED-16 (1969) p. 338.
M. Shatzkes and J.R. Lloyd, J. Appl. Phys. 59 (1986) p. 3890.
I.A. Blech, J. Appl. Phys. 47 (1976) p. 1203.
W.J. Bertram, in VLSI Technology, 2nd ed., edited by S. M. Sze (McGraw-Hill, New York, 1988), Chapter 14.
C.V. Thompson and H. Kahn, J. Electron. Mater. 22 (1993) p. 581.
J. Cho and C.V. Thompson, J. Electron. Mater. 19 (1990) p. 1207.
L.P. Muray, L.C. Rathbun, and E.D. Wolf, Appl. Phys. Lett. 53 (1988) p. 1414.
J. Cho and C.V. Thompson, Appl Phys. Lett. 54 (1989) p. 2577.
J.R. Lloyd and J. Kitchin, J. Appl. Phys. 69 (1991) p. 2117.
J.R. Lloyd, in Materials Reliability in Microelectronics II, edited by C.V. Thompson and J. R. Lloyd (Mater. Res. Soc. Symp. Proc. 265, Pittsburgh, PA, 1992) p. 177.
B.J. Root and T. Turner, Proc. 23rd Annu. Int. Rel. Phys. Symp. IEEE, 100 (1985) p. 100.
C.C. Hong and D.L. Crook, in Reference 13, p. 108.
R.H. Koch, J.R. Lloyd, and J.R. Cronin, Phys. Rev. Lett. 65 (1985) p. 2484.
E. Vollkommer, H.G. Bohn, K-H. Robrock, and W. Schilling, Proc. 28th Annu. Int. Rel. Phys. Symp. IEEE, 51 (1990).
J.R. Lloyd and R.H. Koch, Appl. Phys. Lett. 52 (1988) p. 914.
D.T. Walton, H.J. Frost, and C.V. Thompson, in Materials Reliability Issues in Microelectronics, edited by J.R. Lloyd, F. Yost, and P. S. Ho (Mater. Res. Soc. Symp. Proc. 225, Pittsburgh, PA, 1991) p. 219.
E.M. Atakov, J.J. Clement, and B. Miner, in “Materials Reliability in Microelectronics III,” edited by K.P. Rodbell, B. Filter, P.S. Ho, and H. J. Frost (Mater. Res. Soc. Symp. Proc. 309, Pittsburgh, PA, 1993) p. 133.
J. E. Sanchez Jr., L.T. McKnelly, and J.W. Morris Jr., J. Electron. Mater. 19 (1990) p. 1213.
J. Rose, Appl. Phys. Lett. 61 (1992) p. 2170.
I.A. Blech, Thin Solid Films 18 (1972) p. 117.
H.P. Longworth and C.V. Thompson, Appl. Phys. Lett. 60 (1992) p. 2219.
K. Gadepally, K. Reddy, S. Hiew, D. Merrill, R. Lahri, and M. Biswal, Effect of TiW as Adhesion Layer, and Underlying Metal, on Electromigration Characteristics of Tungsten Via Plugs, Technology Development-FRC, National Semiconductor, M/S E120, 2900 Semiconductor Dr., Santa Clara, CA 95052-8090.
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Thompson, C.V., Lloyd, J.R. Electromigration and IC Interconnects. MRS Bulletin 18, 19–25 (1993). https://doi.org/10.1557/S088376940003904X
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DOI: https://doi.org/10.1557/S088376940003904X