Abstract
We present an all-organic permanent memory transistor using an amorphous spin-cast gate insulator. This gate insulator exhibits a remanent polarisation in its amorphous state, a unique property, which is best described as “ferroelectric-like”. The memory transistor thus built perform extremely well, even when compared to inorganic ferroelectric memory transistors; the memory “on” to memory “off” current ratio is close to 3×10-a4, while time-dependent studies show retention times of 14 hours and more.
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Schroeder, R., Majewski, L.A., Voigt, M. et al. All-organic single-transistor permanent memory device. MRS Online Proceedings Library 830, 282–287 (2004). https://doi.org/10.1557/PROC-830-D6.19
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DOI: https://doi.org/10.1557/PROC-830-D6.19