Abstract
Guided by the internal-reference rule and the known band o sets in - and - diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as the cases for which the doping by shallow impurities may lead to the ferromagnetism driven by the double exchange. e consider the dependence of kinetic exchange on the p-d hybridization, on the electronic con gurations of the magnetic ions, and on the energies of the charge transfer betw een the valence band of host materials and the magnetic ions. n the case of n-based - compounds, the doping by acceptors is necessary for the hole-induced ferromagnetism. he latter is, how ever, possible without any doping for some of Mn-, Fe- or Co-based - magnetic semiconductors. n nitrides with Fe or Co carrier-induced ferromagnetism with TC > 300 is expected in the presence of acceptor doping.
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References
H. Ohno, et al., H. Munekata, T. Penney, S. von. Molnar and L.L. Chang, Phys. Rev.Lett. 68, 2664 (1992).
H. Ohno, et al. Appl. Phys. Lett. 69, 363 (1996).
A. Van. Esch, L. Van. Bockstal et al., Phys. Rev. B 56, 13103 (1997).
F. Matsukura, H. Ohno, A. Shen and Y. Sugawara, Phys. Rev.B 57, R2037 (1998).
A. Haury et al., Phys. Rev. Lett. 79, 511 (1997).
D. Ferrand et al., Phys. Rev. B 63, 085201 (2001).
H. Ohno, J. Magn. Magn. Mater. 200, 110 (1999).
T. Dietl, Physica E 10, 120 (2001).
Y. Ohno et al., Nature 402 790 (1999).
H. Ohno et al., Nature 408, 944(2000).
M. Tanaka and Y. Higo, Phys. Rev. Lett. 87, 026602 (2001).
T. Dietl, H. Ohno, F. Matsukura, J. Cibert and D. Ferrand, Science 287, 1019 (2000)
T. Dietl, H. Ohno and F. Matsukura, Phys. Rev. B 63, 195205 (2001).
T. Dietle-print: http://arXiv.org/abs/cond-mat/0201282 and references therein
Y.D. Park, et al., Appl. Phys. Lett 78, 2739 (2001).
T. Dietl, A. Haury, and Y. Merle d’Aubigné, Phys. Rev. B 55, R3347 (1997).
T. Andrearczyk et al., Proceedings25th ICPS, Osaka, Japan, 2000, eds. N. Miura and T. Ando (Spriger, Berlin, 2001) p. 235.
P. Kacman, Semicon. Sci. Technol. 16, R25 (2001).
J. Kossut and W. Dobrowolski, in Handbook of Magnetic Materials, Vol.7, ed. K.H.J. Buschow (Elsevier, Amsterdam 1993), p. 231; T. Dietl, in Handbook on Semiconductors, Vol. 3B, ed. T.S. Moss (Elsevier, Amsterdam 1994), p. 1251.
A.K. Bhattacharjee and C. Benoitàla Guillaume, Solid State Commun. 113, 17 (2000).
J. Szczytko, W. Bardyszewski and A. Twardowski, Phys. R ev. B64, 075306 (2001).
S. Sanvito, P. Ordejon and N.A. Hill, Phys. R ev.B 63, 165206 (2001).
J. Okabayashi et al., Phys. Rev. B 58, R4211 (1998).
M. J. Caldas, A. Fuzzio and A. Zunger Appl. Phys. Lett 45, 671 (1984).
J.M. Langer, C. Delerue, M. Lannoo and H. Heinrich, Phys. Rev.B 38, 7723 (1988).
P. Vogl and J.M. Baranowski, Acta Phys. Polon. A 67, 133 (1985).
A. Zunger, in: Solid State Phys., vol.39, eds. H. Ehrenreich and D. Turnbull (Academic Press, New York, 1986), p. 275.
V.I. Sokolov, Fiz. Tverd. Tela 29, 1848 (1987).
D. Heiman et al., Mater. Res. Soc.Symp. Proc., Vol.161, (1990), p. 479.
S.M. Sze Physics of Semiconductor Devices (John Wiley and Sons, NY 1981), p. 849.
S-H. Wei and A. Zunger, Appl. Phys. Lett. 72, 2011 (1998).
I. Vurgaftman, J.R. Meyer and L.R Ram-Mohan, J. Appl. Phys. 89, 5815(2001).
J. Kreissl, W. Ulrici, M. El-Metoui, A.-M. Vasson, A. Vasson and A. Gavaix, Phys. Rev.B 54, 10508 (1996).
K. Ueda, H. Tabata and T. Kawai, Appl. Phys. Lett. 79, 988 (2001).
H. Saeki, H. Tabata and T. Kawai, Solid State Commun. 120, 439 (2001).
J. Blinowski, P. Kacman and J.A. Majewski, J. Cryst. Growth 159, 972 (1996).
C. Benoitàla Guillaume, D. Scalbert and T. Dietl, Phys. Rev. B46, 9853 (1992).
T. Dietl, F. Matsukura and H. Ohno, e-print: http://arXiv.org/abs/cond-mat/0109245.
P Glód, T. Dietl, T. Fromherz, G. Bauer and I. Miotkowski Phys. Rev.B 49, 7797 (1994).
H. Ohldag et al., Appl. Phys. Lett. 76, 2928 (2000).
J.H. Park, S.K. Kwon and B.I. Min, Physica B 281&282, 703 (2000).
H. Akai, Phys. Rev. Lett. 81, 3002 (1998).
J. Blinowski and P. Kacman, Phys. Rev.B 46, 12298 (1992).
T. Nambu, unpublished.
J. Blinowski and P. Kacman, ActaPhys. Polon. A 100, 343 (2001).
H. Akinaga et al., Appl. Phys. Lett. 77, 4377 (2000).
M Zajac et al., Appl. Phys. Lett. 79, 2432 (2001).
A Wolos’, M. Palczewska, M Kaminska and A. Twardowski, unpublished.
N. Theodoropolpu et al., Appl. Phys. Lett. 78, 3475 (2001).
M. L. Reed. Appl. Phys. Lett. 79, 3473 (2001).
S. Sonoda, S. Shimizu, T. Sasaki, Y. Yamamoto and H. Hori, e-print: http://arXiv.org/abs/cond-mat/0108159.
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Blinowski, J., Kacman, P. & Dietl, T. Kinetic Exchange Vs. Room Temperature Ferromagnetism in Diluted Magnetic Semiconductors. MRS Online Proceedings Library 690, F6.9 (2001). https://doi.org/10.1557/PROC-690-F6.9
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DOI: https://doi.org/10.1557/PROC-690-F6.9