Abstract
Xerogel films of high porosity were fabricated using an ambient pressure technique. The same porosity can be obtained with different microstructures by varying the aging time of the films. The dielectric constant of these films as a function of porosity at 1 MHz follows correlations originally developed for bulk aerogels. Diffusion of copper is orders of magnitude faster in these xerogels than in the corresponding thermal oxide. An activation energy of 0.9 eV was estimated based on a convective diffusion model.
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Nitta, S., Jain, A., Pisupatti, V. et al. Fabrication and Characterization of Spin-On Silica Xerogel Films. MRS Online Proceedings Library 511, 99–104 (1998). https://doi.org/10.1557/PROC-511-99
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DOI: https://doi.org/10.1557/PROC-511-99