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Diffusion and Effusion of Hydrogen in Microcrystalline Silicon

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Abstract

The diffusion and effusion of hydrogen in hydrogenated microcrystalline silicon films deposited in an electron cyclotron resonance reactor were studied for various deposition temperatures Ts. For deposition temperatures below 250°C, hydrogen effusion is found to be dominated by desorption of hydrogen from internal surfaces followed by rapid out-diffusion of H2. Higher substrate temperatures result in an increased hydrogen stability suggesting the growth of a more compact material. For this latter type of samples, a hydrogen diffusion coefficient similar as in compact plasma-grown a-Si:H films is found despite a different predominant bonding of hydrogen according to infrared absorption.

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Acknowledgement

The authors wish to thank F. Pennartz and R. von de Berg for technical assistance and M. Gebauer for the deuterium implantations. Helpful discussions with F. Finger and H. Wagner and the support by the BMBF are gratefully acknowledged.

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Authors and Affiliations

  1. Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425, Jülich, Germany

    W. Beyer, P. Hapke & U. Zastrow

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  1. W. Beyer
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  2. P. Hapke
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  3. U. Zastrow
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Beyer, W., Hapke, P. & Zastrow, U. Diffusion and Effusion of Hydrogen in Microcrystalline Silicon. MRS Online Proceedings Library 467, 343–348 (1997). https://doi.org/10.1557/PROC-467-343

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