Abstract
First results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10−7 to 10−5 and an orange spectrum. Over the last year some progress was achieved:
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By applying UV–light during the etching blue and green light emitting diodes in porous silicon are fabricated.
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When a p/n junction is realized within the porous region, a quantum efficiency of 10−4 is obtained.
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Acknowledgment
We thank Prof. I. Ruge for his support, A. Richter for discussions, M. Sauter for measurements, H. Kranz for ion implantation and G. Gleske for the ITO contacts.
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Steiner, P., Kozlowski, F., Sandmaier, H. et al. New Results on Electroluminescence from Porous Silicon. MRS Online Proceedings Library 283, 343–351 (1992). https://doi.org/10.1557/PROC-283-343
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DOI: https://doi.org/10.1557/PROC-283-343