Abstract
We have studied methods of improving glow-discharge-deposited a-Sil-xGex:H alloys deposited using silane and germane gas mixtures. Material processing methods studied include (1) varying the substrate temperature from 170° to 280°C, (2) varying the process gas composition and pressure, (3) dilution of the feed gas by hydrogen, argon, or helium, (4) enhancing etching during deposition by adding small amounts of XeF2 vapor into the process gas, and (5) postdeposition annealing and/or hydrogenation.
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Acknowledgement
This work was supported by the U.S. Department of Energy under Contract No. DE-AC02- 83CH10093. We thank Alice Mason for the electron microprobe measurements for determining film Ge contents. We thank Dr. A.K. Barua of the Indian Association for the Cultivation of Science for supplying the sputtered a-SiGe:H films.
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Tsuo, Y., Xu, Y., Ramsay, E. et al. Methods of Improving Glow-Discharge-Deposited a-Si1-xGex:H. MRS Online Proceedings Library 219, 769–774 (1991). https://doi.org/10.1557/PROC-219-769
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DOI: https://doi.org/10.1557/PROC-219-769