Abstract
We have successfully grown InGaAs/AIAsSb quantum-well (QW) structures lattice-matched to InP by molecular beam epitaxy for the first time. We studied the band-edge discontinuity and the interface abruptness of these heterostructures. A cross-sectional lattice image of InGaAs/AlAsSb QWs taken along the [100] axis showed atomically smooth heterointerfaces. The photoluminescence (PL) peak energy of the 20-nm-thick InGaAs well (0.758 eV) was lower than that of InGaAs bulk (0.799 eV), indicating that the InGaAs/AlAsSb system has a staggered lineup. The conduction band-edge discontinuity, AEc, was evaluated to be 1.74 ± 0.04 eV, which was derived from parameter fitting to the 4.2 K PL peak energy shifts of QWs as a function of InGaAs well width between 2.1 nm and 20 nm. The corresponding valence band-edge discontinuity, AEv, was 0.07 ± 0.02 eV. We also fabricated a resonant tunneling barrier structure of InGaAs (4.4 nm)/AlAsSb (2.9 nm), and obtained a very high peak-to-valley current ratio of 15 at 300 K.
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Acknowledgements
We thank M. Yamaguchi for technical assistance, and T. Otsuki and T. Yamaoka for their encouragement.
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Nakata, Y., Sugiyama, Y., Inata, T. et al. InGaAs/AlAsSb Heterostructures Lattice-Matched to InP Grown by Molecular Beam Epitaxy. MRS Online Proceedings Library 198, 289–294 (1990). https://doi.org/10.1557/PROC-198-289
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DOI: https://doi.org/10.1557/PROC-198-289