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Quantum Ring Infrared Photodetector Based On Droplet Epitaxy Technique

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Abstract

In this work, we design and fabricate a GaAs quantum ring infrared photodetector. The lattice matched GaAs/Al0.3Ga0.7As quantum rings are grown by using molecular beam epitaxy technique. The morphology of the quantum rings are characterized by an atomic force microscopy. Normal incident configured photodetectors are fabricated by standard photolithography. The photoresponse spectra are measured by a Fourier transform infrared spectrometer and exhibit two broad bands in visible-near-infrared and mid-infrared spectral range. Using quantum rings as absorption medium, we observed visible-near-infrared response at a temperature as high as 300 K while mid-infrared response up to 140 K.

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Authors and Affiliations

  1. Department of Electrical Engineering, University of Arkansas, 72701, Fayetteville, AR, USA

    Dali Shao, Jiang Wu & Omar Manasreh

  2. Institute of Nanoscale Science and Engineering, University of Arkansas, 72701, Fayetteville, AR, USA

    Zhenhua Li, P. Kunets Vasyl, Zhiming Wang & Gregory Salamo

Authors
  1. Dali Shao
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  2. Jiang Wu
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  3. Zhenhua Li
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  4. Omar Manasreh
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  5. P. Kunets Vasyl
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  6. Zhiming Wang
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  7. Gregory Salamo
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Shao, D., Wu, J., Li, Z. et al. Quantum Ring Infrared Photodetector Based On Droplet Epitaxy Technique. MRS Online Proceedings Library 1208, 924 (2009). https://doi.org/10.1557/PROC-1208-O09-24

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  • DOI: https://doi.org/10.1557/PROC-1208-O09-24

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