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Formation of a New Blue-Shift Emission in Highly Be-Doped GaAs Grown by Molecular Beam Epitaxy

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Abstract

Photoluminescence measurements of Be-doped GaAs, grown by molecular beam epitaxy, were carried out at low temperature as a function of acceptor concentration. Results revealed that besides the well-defined emission, [g-g], which is exclusively relevant to acceptor impurities, an additional specific emission, temporarily denoted by [g-g]α is formed near the bandedge, when the concentration of acceptors exceeds 1×1019 cm−3. From the viewpoint of application it was suggested that also in case of acceptors, photoluminescence spectra can be practically used for the precise determination the acceptor concentration.

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Acknowledgement

The authors wish to express their gratitude to Jun-ichi Shimada and Yoshinobu Mitsuhashi for their continued support.

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Authors and Affiliations

  1. Electrotechnical Laboratory, Umezono 1-1-A, Tsukuba-shi, Ibaraki-ken, 305, Japan

    Yunosuke Makita, Masahiko Mori, Paul Phelan, Yoshinobu Sugiyama & Munecazu Tacano

  2. Institute of Fundamental Analysis Co., LTD., Yoyogi 3-24-3, Shibuya-ku, Tokyo, 151, Japan

    Nobukazu Ohnishi

  3. Nippon Soken Inc. Co., Iwaya H, Shimosumi, Nishio-shi, Aichi-ken, 445, Japan

    Takashi Taguchi

Authors
  1. Yunosuke Makita
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  2. Masahiko Mori
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  3. Nobukazu Ohnishi
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  4. Paul Phelan
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  5. Takashi Taguchi
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  6. Yoshinobu Sugiyama
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  7. Munecazu Tacano
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Makita, Y., Mori, M., Ohnishi, N. et al. Formation of a New Blue-Shift Emission in Highly Be-Doped GaAs Grown by Molecular Beam Epitaxy. MRS Online Proceedings Library 102, 175–178 (1987). https://doi.org/10.1557/PROC-102-175

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  • DOI: https://doi.org/10.1557/PROC-102-175

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