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Modeling and Simulation of n-Type Carbon Nanotube Field Effect Transistors Using Ca as Contact Electrodes

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Abstract

In this research work, a model has been proposed in view of the recent experimental demonstration using Calcium (Ca) as a contact metal to realize the n-type carbon nanotube field effect transistors (CNTFET). In order to fully optimize this proposed device model, effects of different parameters like the work function, oxide thickness, the oxide capacitance and the source velocity limits were studied. Among all the parameters, the work function of the contact metal plays an important role for controlling the flow of carriers through the carbon nanotube channel and to reduce the threshold voltage. A semi-classical simulation of the proposed n-type CNTFET has been performed. Results show an excellent subthreshold swing value of 62.91 mV/decade, close to the International Technology Roadmap for Semiconductor (ITRS) specifications.

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Authors and Affiliations

  1. Electrical and computer engineering, University of South Alabama, 307 University Blvd., ECEB51, 36688, Mobile, AL, USA

    Aurangzeb Khan

  2. ECE, University of south Alabama, 307 university Blvd., 36688, Mobile, AL, USA

    Q. S. A. Shah

  3. Mechanical Engineering, University of South Alabama, 307 University Blvd., 36688, Mobile, AL, USA

    Jihua Gou

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  1. Aurangzeb Khan
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  2. Q. S. A. Shah
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  3. Jihua Gou
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Khan, A., Shah, Q.S.A. & Gou, J. Modeling and Simulation of n-Type Carbon Nanotube Field Effect Transistors Using Ca as Contact Electrodes. MRS Online Proceedings Library 1018, 1017 (2007). https://doi.org/10.1557/PROC-1018-EE10-17

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  • DOI: https://doi.org/10.1557/PROC-1018-EE10-17

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