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Preparation of Cu(In1-xGax)Se2 Thin Films and Solar Cells Using a Se-radical Beam Source

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Abstract

We have grown device-grade Cu(In,Ga)Se2 (CIGS) thin films using a RF-cracked Se-radical beam source. A unique combination of film properties: smooth surface, large grain size and high photovoltaic performance are shown. A competitive energy conversion efficiency of 17 % has been demonstrated from a solar cell fabricated using a CIGS absorber grown with a Se-radical source. In addition to the unique combination of film properties and high photovoltaic performance, a significant improvement in the use of Se source material in comparison with the conventional Se-evaporative sources has been demonstrated.

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Authors and Affiliations

  1. Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki, 3058568, Japan

    Shogo Ishizuka, Akimasa Yamada, Keiichiro Sakurai, Koji Matsubara & Shigeru Niki

  2. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki, 3058568, Japan

    Hajime Shibata

  3. Center for Applied Near-Field Optics Research, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki, 3058562, Japan

    Paul Fons

Authors
  1. Shogo Ishizuka
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  2. Akimasa Yamada
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  3. Hajime Shibata
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  4. Keiichiro Sakurai
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  5. Paul Fons
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  6. Koji Matsubara
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  7. Shigeru Niki
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Ishizuka, S., Yamada, A., Shibata, H. et al. Preparation of Cu(In1-xGax)Se2 Thin Films and Solar Cells Using a Se-radical Beam Source. MRS Online Proceedings Library 1012, 106 (2007). https://doi.org/10.1557/PROC-1012-Y01-06

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  • DOI: https://doi.org/10.1557/PROC-1012-Y01-06

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