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Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

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Abstract

We have determined the lattice location of ion implanted As in ZnO and GaN by means of conversion electron emission channeling from radioactive 73As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites in ZnO but in its large majority substitutional Zn sites. Arsenic in ZnO is thus an interesting example for an impurity in a semiconductor where the major impurity lattice site is determined by atomic size and electronegativity rather than its position in the periodic system. In contrast, in GaN the preference of As for substitutional cation sites is less pronounced and about half of the implanted As atoms occupy Ga and the other half N sites. Apparently, the smaller size-mismatch between As and N and the chemical similarity of both elements make it feasible that As partly substitutes for N atoms.

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Authors and Affiliations

  1. Dep. Fisica, Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953, Sacavem, Portugal

    Ulrich Wahl, Joao Guilherme Correia & Eduardo Alves

  2. Centro de Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003, Lisbon, Portugal

    Ulrich Wahl, Joao Guilherme Correia, Elisabete Rita, Ana Claudia Marques, Eduardo Alves & Jose Carvalho Soares

  3. CERN, 1211, Geneva 23, Switzerland

    Ana Claudia Marques

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  1. Ulrich Wahl
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Wahl, U., Correia, J.G., Rita, E. et al. Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?. MRS Online Proceedings Library 994, 09940103 (2006). https://doi.org/10.1557/PROC-0994-F01-03

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