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Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

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Abstract

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

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Authors and Affiliations

  1. Hosono Transparent Electro-Active Materials (TEAM) Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST) Agency, KSP C-1232, 213-0012, Takatsu, Kawasaki, Japan

    Hidenori Hiramatsu, Kazushige Ueda, Kouhei Takafuji, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya & Hideo Hosono

  2. Materials and Structures Laboratory, Tokyo Institute of Technology, 226-8503, Midori, Yokohama, Japan

    Kouhei Takafuji, Hiromichi Ohta, Toshio Kamiya & Hideo Hosono

Authors
  1. Hidenori Hiramatsu
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  2. Kazushige Ueda
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  3. Kouhei Takafuji
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  4. Hiromichi Ohta
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  5. Masahiro Hirano
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  6. Toshio Kamiya
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  7. Hideo Hosono
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Correspondence to Hidenori Hiramatsu.

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Hiramatsu, H., Ueda, K., Takafuji, K. et al. Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy. Journal of Materials Research 19, 2137–2143 (2004). https://doi.org/10.1557/JMR.2004.0273

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  • DOI: https://doi.org/10.1557/JMR.2004.0273

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