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Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx, Ti1−x)O3 thin films as a function of composition

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Abstract

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx, Ti1−x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2).X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.

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  1. Laboratoire de Céramique, Federal Institute of Technology (EPFL), CH-1015, Lausanne, Switzerland

    S. Hiboux, P. Muralt & T. Maeder

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  1. S. Hiboux
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  2. P. Muralt
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  3. T. Maeder
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Hiboux, S., Muralt, P. & Maeder, T. Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx, Ti1−x)O3 thin films as a function of composition. Journal of Materials Research 14, 4307–4318 (1999). https://doi.org/10.1557/JMR.1999.0584

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  • DOI: https://doi.org/10.1557/JMR.1999.0584

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