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The influence of crystallization route on the SrBi2Nb2O9 thin films

  • Journal of Materials Research
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Abstract

Polycrystalline SrBi2Nb2O9-layered ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrate using the polymeric precursors solution. The dip-coated films were specular and crack-free and crystallized during firing at 700 °C. Single-, double-, and triple-layered films were obtained by several dips in the deposition solution, and the influence of crystallization between each dip was studied. Microstructure and morphological evaluation were followed by grazing incident x-ray diffraction (GIXRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystallized layer route present a dense microstructure with spherical grains, with a preferential orientation in the <215> direction; films obtained using the intermediate-amorphous layer route are polycrystalline and present elongated grains around 250 nm in size.

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Authors and Affiliations

  1. Departamento de Química, UFSCar, P.O. Box 676, S˜ao Carlos, SP, 13560-905, Brazil

    S. M. Zanetti, E. R. Leite & E. Longo

  2. Instituto de Química, UNESP, P.O. Box 355, Araraquara, SP, 14801-970, Brazil

    J. A. Varela

Authors
  1. S. M. Zanetti
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  2. E. R. Leite
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  3. E. Longo
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  4. J. A. Varela
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Zanetti, S.M., Leite, E.R., Longo, E. et al. The influence of crystallization route on the SrBi2Nb2O9 thin films. Journal of Materials Research 14, 1026–1031 (1999). https://doi.org/10.1557/JMR.1999.0136

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  • DOI: https://doi.org/10.1557/JMR.1999.0136

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