Abstract
Well-crystallized Pb(Zr0.52Ti0.48)O3 thin films (4000 Å thickness) can be synthesized on Pt/Ti/SiO2/Si(100) substrate at a temperature as low as 520 °C. The polycrystalline lead zirconate titanate (PZT) perovskite phase formation was confirmed with x-ray diffraction (XRD) analysis, and growth morphologies were studied with a scanning electron microscope (SEM). The electrical properties of PZT thin films were characterized through P-E hysteresis curve, dielectric constant, and loss, fatigue, and leakage current measurements. Remanent polarization (Pr) and coercive field (Ec) of as-grown film were 8–30 μC/cm2 and 24–64 kV/cm with the variation of applied voltage (5–15 V). The post-annealing enhances the electrical properties even at 500 °C, which is below the as-grown temperatures (520 °C). The average polarization loss after applying rectangular pulse (Vp-p = 10 V) up to 1011 cycles was 40.9% for a 300 μm small dot and 22% for a 500 μm large dot, which are relatively improved values for platinum electrode. The values of dielectric constant (ε′) and tan δ measured with small signal sign wave (1 V, 10 kHz) were 1207 and 0.066 in the case of as-grown film.
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References
J. T. Evans, Jr. and R. Womack, IEEE J. Solid-State Circuit 23, 1171 (1988).
L.H. Parker and A. F. Tasch, IEEE Circuits and Devices Magazine, Jan. 17 (1990).
D.L. Polla, C. Ye, P. Schiller, T. Tamagawa, W. P. Robbins, D. Glumac, and C-C. Hsueh, in Ferroelectric Thin Films II, edited by A. Kingon, E.R. Myers, and B. Tuttle (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 55.
L.L. Boyer, A. Y. Wu, and J.R. McNeil, in Ferroelectric Thin Films, edited by E.R. Myers and A.I. Kingon (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 97.
O. Auciello, A. I. Kingon, and S.B. Krupanidhi, MRS Bull. 21, 25 (1996).
R.W. Whatmore, P. Kirby, A. Patel, N.M. Shorrocks, T. Bland, and M. Walker, Ferroelectric Thin Films for Capacitor and Sensor Applications, edited by O. Auciello and R. Waser (Kluwer Acad. Press, London, 1995), p. 383.
B.A. Tuttle, R.W. Schwartz, D.H. Doughty, and J. A. Voigt, in Ferroelectric Thin Films, edited by E. R. Myers and A. I. Kingon (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 159.
S. D. Bernstein, Y. Kisler, J. M. Wahl, S. E. Bernacki, and S. R. Collins, in Ferroelectric Thin Films II, edited by A. I. Kingon, E. R. Myers, and B. Tuttle (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 373.
S. D. Bernstein, T. Y. Wong, S. R. Collins, Y. Kisler, and R. W. Tustison, in Ferroelectric Thin Films IV, edited by B. A. Tuttle, S. B. Desu, R. Ramesh, and T. Shiosaki (Mater. Res. Soc. Symp. Proc. 361, Pittsburgh, PA, 1995), p. 477.
S. P. Faure, P. Gaucher, and J. P. Ganne, in Ferroelectric Thin Films II, edited by A. I. Kingon, E. R. Myers, and B. Tuttle (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 129.
T. Hase and T. Shiosaki, Jpn. J. Appl. Phys. 30, 2159 (1991).
M. Sayer, A. Mansingh, A. K. Arora, and A. Lo, Integrated Ferroelectrics 1, 129 (1992).
S.C. Lee, G. Teowee, R. D. Schrimpe, D.P. Birnie, III, D.R. Uhlmann, and K.F. Galloway, Integrated Ferroelectrics 4, 31 (1994).
J. F. Scott, B.M. Melinck, J.D. Cuchiaro, R. Zueleeg, C.A. Araujo, L.D. McMillan, and M. C. Scott, Integrated Ferroelectrics 4, 85 (1994).
X. Chen, A. I. Kingon, L. Mantese, O. Auciello, and K. Y. Hsieh, Integrated Ferroelectrics 3, 355 (1993).
S. B. Desu and I. K. Yoo, Integrated Ferroelectrics 3, 367 (1993).
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Kim, T., Kim, D.J. & Jung, H.J. Structural and electrical properties of excess PbO doped Pb(Zr0.52Ti0.48)O3 thin films using rf magnetron sputtering method. Journal of Materials Research 13, 3436–3441 (1998). https://doi.org/10.1557/JMR.1998.0467
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DOI: https://doi.org/10.1557/JMR.1998.0467