Year 2010 - Issue 1 - January-February
International Conference on Transport Theory 2009

A Schroedinger-Poisson-Boltzmann system applied to the charge carrier transport in strained silicon

Authors: G. Toschkoff, G. Ossig, P. Lichtenberger, K. Zojer, F. Schürrer
DOI: 10.1393/ncc/i2010-10585-1
pp. 239-246
Published online 18 March 2010
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